Preface
SEMI Standards for SiC Wafers
p.5
p.5
Optimization of 150 mm 4H SiC Substrate Crystal Quality
p.11
p.11
Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
p.15
p.15
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
p.19
p.19
Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
p.23
p.23
The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
p.27
p.27
Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
p.31
p.31
Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
p.35
p.35
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 924)
Online since:
June 2018
Сopyright:
© 2018 Trans Tech Publications Ltd. All Rights Reserved
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