Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique

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This study reports our newly developed technology for SiC solution growth. In particular, we succeed in completely suppressing solvent inclusions, which have been a serious technological problem peculiar to the solution growth method. Then, we fabricate two-inch-diameter 4° off-axis SiC wafers without solvent inclusions. Moreover, we performed their crystal defects evaluation. It was found that our wafers were low resistance n-type 4H-SiC and contain almost no basal plane dislocation. As a result, the superior quality of our solution-grown crystal was confirmed.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

31-34

Citation:

K. Kusunoki et al., "Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique", Materials Science Forum, Vol. 924, pp. 31-34, 2018

Online since:

June 2018

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$38.00

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