Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique

Kazuhiko Kusunoki; Kazuaki Seki; Yutaka Kishida; Hiroshi Kaido; Koji Moriguchi; Hironori Daikoku; Motohisa Kado; Takayuki Shirai; Mitustoshi Akita; Hiroaki Saito

doi:10.4028/www.scientific.net/MSF.924.31

Paper Titles

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
p.15

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
p.19

Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
p.23

The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
p.27

Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
p.31

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
p.35

Dislocation Behavior in Bulk Crystals Grown by TSSG Method
p.39

Experimental Determination of Carbon Solubility in Si_0.56Cr_0.4M_0.04 (M = Transition Metal) Solvents for Solution Growth of SiC
p.43

Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal
p.47

HomeMaterials Science ForumMaterials Science Forum Vol. 924Development of Solvent Inclusion Free 4H-SiC...

Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique

Abstract:

This study reports our newly developed technology for SiC solution growth. In particular, we succeed in completely suppressing solvent inclusions, which have been a serious technological problem peculiar to the solution growth method. Then, we fabricate two-inch-diameter 4° off-axis SiC wafers without solvent inclusions. Moreover, we performed their crystal defects evaluation. It was found that our wafers were low resistance n-type 4H-SiC and contain almost no basal plane dislocation. As a result, the superior quality of our solution-grown crystal was confirmed.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2017

View Preview

Info:

Periodical:

Materials Science Forum (Volume 924)

Pages:

31-34

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.31

Citation:

Cite this paper

Online since:

June 2018

Authors:

Kazuhiko Kusunoki*, Kazuaki Seki, Yutaka Kishida, Hiroshi Kaido, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Takayuki Shirai, Mitustoshi Akita, Hiroaki Saito

Keywords:

4H-SiC, Morphological Instability, Solution Growth, Solvent Inclusion Free

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Daikoku et al, Cryst. Growth Des. 16 (2016) 1256-1260.

Google Scholar

[2] K. Kusunoki et al, Mater. Sci. Forum 778-780 (2014) 79-82.

Google Scholar

[3] K. Kusunoki et al, J. Cryst. Growth 392 (2014) 60-65.

Google Scholar

[4] N. Ohtani et al, J. Cryst. Growth 311 (2009) 1475-1481.

Google Scholar

[5] K. Seki et al, Mater. Sci. Forum, Proceedings of ICSCRM 2017, in press.

Google Scholar

[6] T. Kimoto, J. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, John Wiley & Sons Singapore Pte. Ltd., (2014).

Google Scholar

[7] H. Tsuge et al, Mater. Sci. Forum 740-742 (2013) 7-10.

Google Scholar

[8] D. F. Hofmann et al, Mater. Sci. Eng. B61-62 (1999) 29.

Google Scholar