Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

Masashi Sonoda; Kentaro Shioura; Takahiro Nakano; Noboru Ohtani; Masakazu Katsuno; Hiroshi Tsuge; Shinya Sato; Tatsuo Fujimoto

doi:10.4028/www.scientific.net/MSF.924.15

Paper Titles

Optimization of 150 mm 4H SiC Substrate Crystal Quality
p.11

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
p.15

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
p.19

Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
p.23

The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
p.27

Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
p.31

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
p.35

HomeMaterials Science ForumMaterials Science Forum Vol. 924Structural Characterization of the Growth Front of...

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

Abstract:

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

15-18

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.15

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Online since:

June 2018

Authors:

Masashi Sonoda, Kentaro Shioura, Takahiro Nakano, Noboru Ohtani*, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

Keywords:

(0001) Facet, 4H-SiC, High Resolution X-Ray Diffraction, Surface Morphology, X-Ray Topography

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