Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si

Koki Suzuki; Koang Yong Hyun; Toshinori Taishi

doi:10.4028/www.scientific.net/MSF.924.35

Paper Titles

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
p.19

Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
p.23

The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
p.27

Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
p.31

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
p.35

Dislocation Behavior in Bulk Crystals Grown by TSSG Method
p.39

Experimental Determination of Carbon Solubility in Si_0.56Cr_0.4M_0.04 (M = Transition Metal) Solvents for Solution Growth of SiC
p.43

Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal
p.47

Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent
p.51

HomeMaterials Science ForumMaterials Science Forum Vol. 924Effect of the Growth Conditions on the Crystal...

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si

Abstract:

We have succeeded in solution growth of SiC from Cr solvent without Si using ceramic SiC as the SiC source. The effect of the growth conditions, such as the liquid height in the crucible, on the crystal quality in solution growth of SiC from Cr solvent was investigated. For a liquid height in the crucible of up to 10 mm, the growth rate increases with increasing liquid height and the SiC crystals are a single polytype, while the growth rate decreases and the crystals are polycrystalline for a liquid height above 10 mm. In the former case, the balance between dissolution and transportation of the solute are comparable. The latter case is expected to be transportation limited because transportation of free C and Si atoms is inhibited by excrescent crystals in solution and the increase in the distance for solute transportation. In addition, a higher growth temperature leads to growth of only 4H-SiC.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

35-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.35

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Online since:

June 2018

Authors:

Koki Suzuki*, Koang Yong Hyun, Toshinori Taishi

Keywords:

Metal Solvent without Molten Si, Polytype, Silicon Carbide (SiC), Solution Growth

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