Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals

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We investigated the run-to-run fluctuation in growth conditions of physical vapor transport growth of 4H-SiC boules through observations of surface morphology on the (000-1) facet of the boules. The boules, which were grown under the same macroscopic growth conditions, exhibited slightly different surface morphologies. This indicates that some microscopic growth parameters that influence the surface morphology fluctuate between growth runs. We have considered the C/Si ratio of the vapor sublimed from the source material as a major parameter and discussed the associated variations in the physical and surface properties of the grown crystals.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

19-22

Citation:

N. Matsumoto et al., "Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals", Materials Science Forum, Vol. 924, pp. 19-22, 2018

Online since:

June 2018

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