Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals

Nana Matsumoto; Hiroaki Shinya; Koji Ashida; Tadaaki Kaneko; Noboru Ohtani; Masakazu Katsuno; Hiroshi Tsuge; Shinya Sato; Tatsuo Fujimoto

doi:10.4028/www.scientific.net/MSF.924.19

Paper Titles

Optimization of 150 mm 4H SiC Substrate Crystal Quality
p.11

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
p.15

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
p.19

Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
p.23

The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
p.27

Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
p.31

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
p.35

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Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals

Abstract:

We investigated the run-to-run fluctuation in growth conditions of physical vapor transport growth of 4H-SiC boules through observations of surface morphology on the (000-1) facet of the boules. The boules, which were grown under the same macroscopic growth conditions, exhibited slightly different surface morphologies. This indicates that some microscopic growth parameters that influence the surface morphology fluctuate between growth runs. We have considered the C/Si ratio of the vapor sublimed from the source material as a major parameter and discussed the associated variations in the physical and surface properties of the grown crystals.