Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

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The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

160-163

Citation:

N. Sugiyama et al., "Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal", Materials Science Forum, Vol. 924, pp. 160-163, 2018

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June 2018

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