Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
N. Sugiyama et al., "Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal", Materials Science Forum, Vol. 924, pp. 160-163, 2018