Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

Naohiro Sugiyama; Hiromasa Suo; Kazuma Eto; Yuichiro Tokuda; Isaho Kamata; Norihiro Hoshino; Tomohisa Kato; Hidekazu Tsuchida; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.924.160

Paper Titles

Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations
p.143

Defects and Polytype Instabilities
p.147

Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
p.151

Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers
p.155

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
p.160

Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
p.164

Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy
p.168

In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers
p.172

Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography
p.176

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Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

Abstract:

The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.