Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations

Yoshitaka Nishihara; Koji Kamei; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.924.143

Paper Titles

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
p.120

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
p.124

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed
p.128

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
p.137

Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations
p.143

Defects and Polytype Instabilities
p.147

Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
p.151

Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers
p.155

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
p.160

HomeMaterials Science ForumMaterials Science Forum Vol. 924Comparative Evaluation of Forward Voltage...

Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations

Abstract:

This study investigated the relationship between the forward voltage degradation induced by SSF expansion and (a) BPD density in substrates and epitaxial layers of SiC, and (b) the temperature during the application forward current to the pin diodes. The V_f shift caused by the BPDs in the drift layer simply depended on the BPD density. However, no correlation was initially observed between the V_f shift and BPD density in the substrate; instead a strong correlation was observed between the V_f shift and the device temperature measured when applying the current stress. Thus when we selected samples which show the same temperature at that time, a correlation was observed between the V_f shift and the BPD density in the SiC substrate, with the slope corresponding to the former, drift layer relationship. Therefore, due to the high BPD density in the SiC substrate, suppressing the V_f shift due to BPD density in this region is highly important, and a combination of approaches is therefore proposed in order to reduce the overall forward voltage degradation.

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Materials Science Forum (Volume 924)

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143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.143

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Online since:

June 2018

Authors:

Yoshitaka Nishihara*, Koji Kamei, Kenji Momose, Hiroshi Osawa

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Device Temperature, Forward Voltage Degradation, PiN Diode

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