Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers

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The scanning of Silicon Carbide (SiC) epitaxy wafers for defects by ultraviolet (UV) laser or lamps is widely prevalent. In this work, we document the effects of UV light excitation on the SiC epitaxy material. An increase in background photoluminescence (PL) is observed after repeated scans. The effect of this increase on defect detection is shown. Optimal surface treatments to recover the material back to the original state are demonstrated. Further, some surface treatments are proposed which reduce the effect of the UV light excitation and prevent to a large extent the rise in background PL.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

261-264

Citation:

H. Das et al., "Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers", Materials Science Forum, Vol. 924, pp. 261-264, 2018

Online since:

June 2018

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$38.00

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