The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

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The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

253-256

Citation:

G. Alfieri et al., "The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC", Materials Science Forum, Vol. 924, pp. 253-256, 2018

Online since:

June 2018

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