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The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC
Abstract:
The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.
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253-256
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June 2018
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© 2018 Trans Tech Publications Ltd. All Rights Reserved
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