Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces

Yuji Yamagishi; Yasuo Cho

doi:10.4028/www.scientific.net/MSF.924.289

Paper Titles

Characterization of Inhomogeneity in Thermal Oxide SiO₂ Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
p.273

Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
p.277

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
p.281

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs
p.285

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO₂/4H-SiC Interfaces
p.289

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals
p.293

Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon
p.297

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes
p.302

Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates
p.306

HomeMaterials Science ForumMaterials Science Forum Vol. 924Improvement of Local Deep Level Transient...

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO₂/4H-SiC Interfaces

Abstract:

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO₂/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of E_C − E_it = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO₂/SiC interfaces is likely to be microscopically clustered.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2017

View Preview

Info:

Periodical:

Materials Science Forum (Volume 924)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.289

Citation:

Cite this paper

Online since:

June 2018

Authors:

Yuji Yamagishi*, Yasuo Cho

Keywords:

4H-SiC, Density of Interface States, DLTS, Microscopy, MOS Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] T. Kimoto, Jpn. J. Appl. Phys. 54 (2015) 040103.

Google Scholar

[2] P. Fiorenza, F. Giannazzo, L. K. Swanson, A. Frazzetto, S. Lorenti, M. S. Alessandrino and F. Roccaforte, Beilstein Journal of Nanotechnology 4 (2013) 249.

DOI: 10.3762/bjnano.4.26

Google Scholar

[3] P. Fiorenza, S. Di Franco, F. Giannazzo and F. Roccaforte, Nanotechnology 27 (2016) 315701.

Google Scholar

[4] V. V. Afanas'ev, A. Stesmans and C. I. Harris, Materials Science Forum 264 (1998) 857.

Google Scholar

[5] R. Nagai, R. Hasunuma and K. Yamabe, Jpn. J. Appl. Phys. 55 (2016) 08PC07.

Google Scholar

[6] N. Chinone, A. Nayak, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura and Y. Cho, Appl. Phys. Lett. 111 (2017) 061602.

DOI: 10.1063/1.4990865

Google Scholar

[7] Y. Cho, A. Kirihara and T. Saeki, Review of Scientific Instruments 67 (1996) 2297.

Google Scholar

[8] K. Yamasue and Y. Cho, Review of Scientific Instruments 86 (2015) 093704.

Google Scholar

[9] N. Chinone, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura and Y. Cho, Microelectronics Reliability 64 (2016) 566.

DOI: 10.1016/j.microrel.2016.07.088

Google Scholar

[10] D. V. Lang, J. Appl. Phys. 45 (1974) 3023.

Google Scholar

[11] M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H. B. Weber and M. Krieger, Materials Science Forum 897 (2017) 111.

DOI: 10.4028/www.scientific.net/msf.897.111

Google Scholar

[12] M. Noborio, J. Suda, S. Beljakowa, M. Krieger and T. Kimoto, Phys. Status Solidi (a) 206 (2009) 2374.

DOI: 10.1002/pssa.200925247

Google Scholar

[13] V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi (a) 162 (1997) 321.

DOI: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f

Google Scholar

[14] T. Akiyama, A. Ito, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K Shiraishi, Surface Science 641 (2015) 174.

DOI: 10.1016/j.susc.2015.06.028

Google Scholar