Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals
The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
K. Okawa et al., "Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals", Materials Science Forum, Vol. 924, pp. 293-296, 2018