Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Kiyo Okawa; Yuina Mannen; Kentaro Shioura; Noboru Ohtani; Masakazu Katsuno; Hiroshi Tsuge; Shinya Sato; Tatsuo Fujimoto

doi:10.4028/www.scientific.net/MSF.924.293

Paper Titles

Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
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Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
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Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs
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Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO₂/4H-SiC Interfaces
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Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals
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Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon
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Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes
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Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates
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THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Annealing Behavior of Electrical Resistivities...

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Abstract:

The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.

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Materials Science Forum (Volume 924)

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293-296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.293

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Online since:

June 2018

Authors:

Kiyo Okawa, Yuina Mannen, Kentaro Shioura, Noboru Ohtani*, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

Keywords:

4H-SiC, Basal Plane Stacking Fault, Electrical Resistivity, Heavy Nitrogen Doping

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References

[1] M. S. Miao, S. Limpijumnong, W. R. L. Lambrecht, Appl. Phys. Lett. 79 (2001) 4360-4362.

Google Scholar

[2] W. R. L. Lambrecht, M. S. Miao, Phys. Rev. B 73 (2006) 155312.

Google Scholar

[3] A. Agarwal, H. Fatima, S. Haney, R. Sei-Hyung, IEEE Electron Device Letters 28 (2007) 587-589.

Google Scholar

[4] V. Veliadis, H. Hearne, E. J. Stewart, M. Snook, W. Chang, J. D. Caldwell, H. C. Ha, N. El-Hinnawy, P. Borodulin, R. S. Howell, D. Urciuoli, A. Lelis, C. Scozzie, IEEE Electron Device Letters 33 (2012) 952-954.

DOI: 10.1109/led.2012.2196674

Google Scholar

[5] W. J. Schaffer, G. H. Negley, K. G. Irvine, J. W. Palmour, Mater. Res. Soc. Symp. Proc. 339 (1994) 595-600.

Google Scholar

[6] Y. Tokuda, T. Yamashita, I. Kamata, T. Naijo, T. Miyazawa, S. Hayashi, N. Hoshino, T. Kato, H. Okumura, T. Kimoto, H. Tsuchida, J. Appl. Phys. 122 (2017) 045707.

DOI: 10.1063/1.4996098

Google Scholar

[7] C. Ohshige, T. Takahashi, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, T. Yano, H. Matsuhata, M. Kitabatake, J. Cryst. Growth 408 (2014) 1-6.

DOI: 10.4028/www.scientific.net/msf.821-823.90

Google Scholar

[8] F. Fujie, S. Harada, K. Murayama, K. Hanada, P. Chen, T. Kato, M. Tagawa, T. Ujihara, International Conference on Silicon Carbide and Related Materials 2017 (Washington DC, USA), TU.BP.4, and these Proceedings.

Google Scholar