Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

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The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

293-296

Citation:

K. Okawa et al., "Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals", Materials Science Forum, Vol. 924, pp. 293-296, 2018

Online since:

June 2018

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