4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200 °C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni, NbNi alloy, Ni and Nb/Ti were investigated, and the Nb/Ni silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
J. Kajihara et al., "4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts", Materials Science Forum, Vol. 924, pp. 423-427, 2018