4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts

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4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200 °C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni, NbNi alloy, Ni and Nb/Ti were investigated, and the Nb/Ni silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

423-427

Citation:

J. Kajihara et al., "4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts", Materials Science Forum, Vol. 924, pp. 423-427, 2018

Online since:

June 2018

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[1] H. Nagatsuma, S-I. Kuroki, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, M. Östling, and C.-M. Zetterling, Mat. Sci. Forum, 858, pp.573-576 (2016).

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.573

[2] S-I. Kuroki, H. Nagatsuma, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Östling, and C.-M. Zetterling, Mat. Sci. Forum, 858, pp.864-867 (2016).

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.864

[3] S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Östling, and C.-M. Zetterling, Mat. Sci. Forum, 897, pp.669-672 (2017).

DOI: https://doi.org/10.4028/www.scientific.net/msf.897.669

[4] Hailong Yu, Xufang Zhang, Huajun Shen, Yidan Tang, Yun Bai, Yudong Wu, Kean Liu, and Xinyu Liu, Journal of Applied Physics 117, 025703 (2015).

DOI: https://doi.org/10.1063/1.4905832

[5] I. Masafumi, K. Suzuki, Y. Hirano, W. Norimatsu, M. Kusunoki, H. Kawarada, Mat. Sci Forum, 858, pp.561-564 (2016).

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.561

[6] M. Vivona, G. Greco, R. Lo Nigro, C. Bongiorno and F. Roccaforte, Journal of Applied Physics 118, 0357051-1 - 035705-7 (2015).

[7] Milantha De Silva, Seiji Ishikawa, Takamichi Miyazaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki, Appl. Phys. Lett. 109, 012101-1 - 012101-5 (2016).

DOI: https://doi.org/10.1063/1.4955406