Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

Shunsuke Asaba; Tatsuo Schimizu; Yukio Nakabayashi; Shigeto Fukatsu; Toshihide Ito; Ryosuke Iijima

doi:10.4028/www.scientific.net/MSF.924.457

Paper Titles

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
p.440

Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
p.444

Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
p.449

Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs
p.453

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
p.457

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition
p.461

Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors
p.465

The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
p.469

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors
p.473

HomeMaterials Science ForumMaterials Science Forum Vol. 924Novel Gate Insulator Process by Nitrogen Annealing...

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

Abstract:

The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N₂ annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm²/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.457

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Online since:

June 2018

Authors:

Shunsuke Asaba*, Tatsuo Schimizu, Yukio Nakabayashi, Shigeto Fukatsu, Toshihide Ito, Ryosuke Iijima

Keywords:

Annealing, Defects, Interface, Mobility, MOSFET, N₂, Reliability, Silicon Carbide (SiC)

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