Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

Abstract:

Article Preview

The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N2 annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm2/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

457-460

Citation:

S. Asaba et al., "Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability", Materials Science Forum, Vol. 924, pp. 457-460, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] K. Fujihira, Y. Tarui, K. Ohtsuka, M. Imaizumi and T. Takami, Materials Science Forum 483-485 (2005) 697.

[2] A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe, AIP Advances 5 (2015) 097134.

[3] A. Chanthaphan, Y. Cheng, T. Hosoi, T. Shimura, and H. Watanabe, Materials Science Forum 858 (2016) 627.

[4] H. Yoshioka, T. Nakamura, and T. Kimoto, Journal of Applied Physics 112 (2012) 024520.

[5] D. Okamoto, M. Sometani, S. Harada, R. Kosugi, Y. Yonezawa and H. Yano, IEEE Electron Device Letters 35 (2014) 1176.

[6] G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, IEEE Electron Device Letters 22 (2001) 176.

DOI: https://doi.org/10.1109/55.915604

[7] C.T. Yen, H.T. Hung, C.C. Hung, C.Y. Lee, H.Y. Lee, L.S. Lee, Y.F. Huang, C.Y. Cheng, P.J. Chuang, and F.J. Hsu, Mater. Sci. Forum, 858 (2016) 595.

[8] M. Sometani, D. Okamoto, S. Harada, H. Ishimori, S. Takasu, T. Hatakeyama, M. Takei, Y.Yonezawa, K. Fukuda, and H. Okumura, Journal of Applied Physics 117 (2015) 024505.

DOI: https://doi.org/10.1063/1.4905916