Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N2 annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm2/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
S. Asaba et al., "Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability", Materials Science Forum, Vol. 924, pp. 457-460, 2018