The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Abstract:

Article Preview

In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induces disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

469-472

Citation:

M. A. Anders et al., "The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping", Materials Science Forum, Vol. 924, pp. 469-472, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] C. J. Cochrane et al., Appl. Phys. Lett. 102 (2013) 193507.

[2] C. J. Cochrane et al., Appl. Phys. Lett. 100 (2012) 023509.

[3] T. Aichinger et al., Appl. Phys. Lett. 101 (2012) 083504.

[4] B. C. Bittel et al., Appl. Phys. Lett. 99 (2011) 083504.

[5] M. A. Anders et al., Appl. Phys. Lett. 109 (2016) 142106.

[6] G. Groeseneken et al., IEEE Trans. on Electron Dev. ED-31 (1984) 42-53.

[7] C. J. Cochrane et al., Appl. Phys. Lett. 104 (2014) 093513.

[8] W. Gordy, Theory and Applications of ESR, John Wiley and Sons, Inc., New York, (1980).

[9] K. C. Chang et al., J. Appl. Phys. 97 (2015) 104920.

[10] T. Hornos et al., Mater. Sci. Forum 679-680 (2011) 261-264.

[11] S Salemi et al., J. Appl. Phys. 113 (2013) 053703.

[12] J. H. Dycus et al., Appl. Phys. Lett. 108 (2016) 201607.