The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Mark A. Anders; Patrick M. Lenahan; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.924.469

Paper Titles

Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs
p.453

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
p.457

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition
p.461

Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors
p.465

The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
p.469

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors
p.473

Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
p.477

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric
p.482

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors
p.486

HomeMaterials Science ForumMaterials Science Forum Vol. 924The Effect of Nitrogen on the 4H-SiC/SiO2...

The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Abstract:

In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induces disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to V_Si sites.