Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
A correlation between field effect mobility and an accumulation conductance has been investigated at 4H-SiC MOS interface with barium. 4H-SiC n-channel MOSFETs and n-type MOS capacitors were fabricated with a barium-introduced SiO2 and a conventional dry SiO2. The field effect mobility was enhanced by introducing the barium-introduced SiO2. It is found that there is a linear correlation between the mobility and the accumulation conductance. The MOS interface of the barium-introduced SiO2 had a lower interface state density of 2×1011 cm-2eV-1 than that of the conventional dry SiO2.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
K. Muraoka et al., "Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium", Materials Science Forum, Vol. 924, pp. 477-481, 2018