Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium

Kosuke Muraoka; Seiji Ishikawa; Hiroshi Sezaki; Tomonori Maeda; Shin Ichiro Kuroki

doi:10.4028/www.scientific.net/MSF.924.477

Paper Titles

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition
p.461

Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors
p.465

The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
p.469

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors
p.473

Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
p.477

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric
p.482

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors
p.486

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al₂O₃
p.490

High-Mobility SiC MOSFETs Using a Thin-SiO₂/Al₂O₃ Gate Stack
p.494

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Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium

Abstract:

A correlation between field effect mobility and an accumulation conductance has been investigated at 4H-SiC MOS interface with barium. 4H-SiC n-channel MOSFETs and n-type MOS capacitors were fabricated with a barium-introduced SiO₂ and a conventional dry SiO₂. The field effect mobility was enhanced by introducing the barium-introduced SiO₂. It is found that there is a linear correlation between the mobility and the accumulation conductance. The MOS interface of the barium-introduced SiO₂ had a lower interface state density of 2×10¹¹ cm^-2eV^-1 than that of the conventional dry SiO₂.