Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

Muhammad I. Idris; Nick G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.924.486

Paper Titles

The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
p.469

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors
p.473

Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
p.477

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric
p.482

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors
p.486

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al₂O₃
p.490

High-Mobility SiC MOSFETs Using a Thin-SiO₂/Al₂O₃ Gate Stack
p.494

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂
p.498

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
p.502

HomeMaterials Science ForumMaterials Science Forum Vol. 924Effect of Post Oxide Annealing on the Electrical...

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors

Abstract:

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.