Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

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This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

486-489

Citation:

M. I. Idris et al., "Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors", Materials Science Forum, Vol. 924, pp. 486-489, 2018

Online since:

June 2018

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