Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2

Min Seok Kang; Bong Mook Lee; Veena Misra

doi:10.4028/www.scientific.net/MSF.924.498

Paper Titles

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric
p.482

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors
p.486

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al₂O₃
p.490

High-Mobility SiC MOSFETs Using a Thin-SiO₂/Al₂O₃ Gate Stack
p.494

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂
p.498

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
p.502

MOCVD Compatible Atomic Layer Deposition Process of Al₂O₃ on SiC and Graphene/SiC Heterostructures
p.506

Incoming and Inline Defectivity Control Solutions for Silicon Carbide Manufacturing
p.513

Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives
p.518

HomeMaterials Science ForumMaterials Science Forum Vol. 924Improved Threshold Voltage Instability in 4H-SiC...

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂

Abstract:

This study reports the electrical characteristics and reliability of the atomic layer deposited SiO₂ on the 4H-SiC substrate. By controlling the thickness of SiO₂ in each ALD cycle, improved device properties like mobility and gate leakage were obtained as compared to the single deposition. Moreover, the optimized process dramatically reduces the threshold voltage shift under positive and negative bias stresses. This improvement can be attributed to the effective removal of unreacted metal-organic precursors, active traps, and broken bonds in the ALD SiO₂ dielectrics as well as reduction in interface state density at SiC/SiO₂ interface.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2017

View Preview

Info:

Periodical:

Materials Science Forum (Volume 924)

Pages:

498-501

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.498

Citation:

Cite this paper

Online since:

June 2018

Authors:

Min Seok Kang, Bong Mook Lee*, Veena Misra

Keywords:

ALD, Atomic Layer Deposition, MOSFET, Silicon Carbide (SiC), Threshold Voltage Instability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, IEEE Electron Device Lett., vol. 22, no. 4 (2001), p.176–178.

DOI: 10.1109/55.915604

Google Scholar

[2] M. Gurfinkel, D. Xiong, P. Cheung, J. S. Suehle, J. B. Bernstein, Y. Shapira, A. J. Lelis, D. Habersat, and N. Goldsman, IEEE Trans. Electron Devices, vol. 55, no. 8 (2008), p.2004–(2012).

DOI: 10.1109/ted.2008.926626

Google Scholar

[3] A. J. Lelis, D. Habersat, R. Green, N. Goldsman, Mater. Sci. Forum, vol. 600 (2009), pp.807-810.

Google Scholar

[4] D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki, IEEE Electron Device Lett., vol. 31, no. 7 (2010), pp.710-712.

DOI: 10.1109/led.2010.2047239

Google Scholar

[5] K. Kutsuki, S. Kawaji, Y. Watanabe, M. Tsujimura, T. Onishi, H. Fujiwara, K. Yamamoto, and T. Kanemura, Mater. Sci. Forum, vol. 858 (2016), pp.607-610.

DOI: 10.4028/www.scientific.net/msf.858.607

Google Scholar

[6] S. M. George, Chem. Rev., vol. 110, no. 1 (2010), p.111–131.

Google Scholar

[7] X. Yang, B. Lee, and V. Misra, IEEE Trans. Electron Devices, vol. 62, no. 11 (2015), pp.3781-3785.

Google Scholar

[8] S. Haney, V. Misra, D. J. Lichtenwalner, and A. Agarwal, X. Yang, B. Lee, and V. Misra, Mater. Sci. Forum, vol. 740-742 (2013), pp.707-710.

DOI: 10.4028/www.scientific.net/msf.740-742.707

Google Scholar

[9] J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams, and L. C. Feldman, IEEE Trans. Electron Devices, vol. 58, no. 11, (2011), pp.3808-3811.

DOI: 10.1109/ted.2011.2164800

Google Scholar