Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

Min Seok Kang; Kevin Lawless; Bong Mook Lee; Veena Misra

doi:10.4028/www.scientific.net/MSF.924.482

Paper Titles

Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors
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The Effect of Nitrogen on the 4H-SiC/SiO₂ Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
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Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors
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Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium
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Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric
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Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors
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Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al₂O₃
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High-Mobility SiC MOSFETs Using a Thin-SiO₂/Al₂O₃ Gate Stack
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Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Effect of High Temperature Forming Gas Annealing...

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric

Abstract:

We investigated the impact of an initial lanthanum oxide (La₂O₃) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (V_T) stability of 4H-SiC MOSFETs. The FGA process leads to low V_T shift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La₂O₃ interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal V_T shift are realized.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

482-485

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.482

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Online since:

June 2018

Authors:

Min Seok Kang, Kevin Lawless, Bong Mook Lee*, Veena Misra

Keywords:

Atomic Layer Deposition, Forming Gas Annealing , Lanthanum Silicate, Silicon Carbide (SiC)

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