Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy

Toshiyuki Isshiki; Masaki Hasegawa; Takahiro Sato; Kenji Kobayashi; Atsushi Miyaki; Masato Iyoki; Takehiro Yamaoka; Katsunori Onuki

doi:10.4028/www.scientific.net/MSF.924.543

Paper Titles

Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope
p.527

Crystal Defect Analysis of Latent Scratch Induced during CMP Process on 4H-SiC Wafer Using Electron Microscopy
p.531

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
p.535

Surface Engineering of SiC through Nanogrinding and CMP
p.539

Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.543

TLS-Dicing for SiC - Latest Assessment Results
p.547

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout
p.559

Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
p.563

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
p.568

HomeMaterials Science ForumMaterials Science Forum Vol. 924Observation of a Latent Scratch on...

Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy

Abstract:

A latent scratch which is an extremely shallow scratch induced on a SiC wafer during chemo-mechanical polishing (CMP) has been investigate by mirror projection electron microscopy (MPJ), low-energy scanning electron microscopy (LESEM), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). The latent scratch, which is difficult to detect by using optical microscopes, was easily visualized by MPJ as a high contrast dark line. The morphology of detected latent scratch is less than 1nm in depth and about 30nm in full width at half depth by AFM evaluation. The STEM observation revealed the latent scratch was accompanied two dislocation arrays. One contains loop-like dislocations and the other contains spiky dislocations, both lying in the wafer at a few ten nm in depth.