Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy

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A latent scratch which is an extremely shallow scratch induced on a SiC wafer during chemo-mechanical polishing (CMP) has been investigate by mirror projection electron microscopy (MPJ), low-energy scanning electron microscopy (LESEM), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). The latent scratch, which is difficult to detect by using optical microscopes, was easily visualized by MPJ as a high contrast dark line. The morphology of detected latent scratch is less than 1nm in depth and about 30nm in full width at half depth by AFM evaluation. The STEM observation revealed the latent scratch was accompanied two dislocation arrays. One contains loop-like dislocations and the other contains spiky dislocations, both lying in the wafer at a few ten nm in depth.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

543-546

Citation:

T. Isshiki et al., "Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy", Materials Science Forum, Vol. 924, pp. 543-546, 2018

Online since:

June 2018

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$38.00

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