TLS-Dicing for SiC - Latest Assessment Results

Dirk Lewke; Mercedes Cerezuela Barreto; Karl Otto Dohnke; Hans Ulrich Zühlke; Christian Belgardt; Martin Schellenberger

doi:10.4028/www.scientific.net/MSF.924.547

Paper Titles

Crystal Defect Analysis of Latent Scratch Induced during CMP Process on 4H-SiC Wafer Using Electron Microscopy
p.531

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
p.535

Surface Engineering of SiC through Nanogrinding and CMP
p.539

Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.543

TLS-Dicing for SiC - Latest Assessment Results
p.547

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout
p.559

Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
p.563

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
p.568

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al⁺ and B⁺
p.573

HomeMaterials Science ForumMaterials Science Forum Vol. 924TLS-Dicing for SiC - Latest Assessment Results

TLS-Dicing for SiC - Latest Assessment Results

Abstract:

With the gaining demand for SiC semiconductor devices it is more and more challenging to meet the requirements for SiC volume production with the state of the art wafer dicing technology. In order to overcome this challenge the laser based dicing technology Thermal Laser Separation (TLS-Dicing^TM) was assessed for SiC volume production within the European project SEA4KET. This paper presents the key results of this project. It could be demonstrated that the demand of SiC volume production regarding throughput and cost as well as edge quality and electrical performance of diced chips can be met with TLS-Dicing^TM.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

547-551

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.547

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Online since:

June 2018

Authors:

Dirk Lewke*, Mercedes Cerezuela Barreto, Karl Otto Dohnke, Hans Ulrich Zühlke, Christian Belgardt, Martin Schellenberger

Keywords:

Kerf Less, Laser, Silicon Carbide (SiC), Thermal Laser Separation, Wafer Dicing

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References

[1] Project website: Semiconductor Equipment Assessment for Key Enabling Technologies (SEA4KET); http://www.sea4ket.eu.

DOI: 10.21820/23987073.2017.3.86

Google Scholar

[2] D. Lewke, et al.: Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices; Materials Science Forum 821-823, P. 528–532.

DOI: 10.4028/www.scientific.net/msf.821-823.528

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[3] Dohnke, Karl Otto; Kaspar, Korbinian; Lewke, Dirk: Comparison of Different Novel Chip Separation Methods for 4H-SiC. In: Materials Science Forum 821-823, S. 520–523.

DOI: 10.4028/www.scientific.net/msf.821-823.520

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[4] DISCO Technical Review Mar. 2016; Dicing technologies for SiC.

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[5] Zühlke, Hans-Ulrich; Lewke, Dirk: High Yield Dicing of 100 mm and 150 mm SiC Wafer with High Throughput; SEMICON Europa 2016, Tech Lounge.

Google Scholar