TLS-Dicing for SiC - Latest Assessment Results


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With the gaining demand for SiC semiconductor devices it is more and more challenging to meet the requirements for SiC volume production with the state of the art wafer dicing technology. In order to overcome this challenge the laser based dicing technology Thermal Laser Separation (TLS-DicingTM) was assessed for SiC volume production within the European project SEA4KET. This paper presents the key results of this project. It could be demonstrated that the demand of SiC volume production regarding throughput and cost as well as edge quality and electrical performance of diced chips can be met with TLS-DicingTM.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




D. Lewke et al., "TLS-Dicing for SiC - Latest Assessment Results", Materials Science Forum, Vol. 924, pp. 547-551, 2018

Online since:

June 2018




* - Corresponding Author

[1] Project website: Semiconductor Equipment Assessment for Key Enabling Technologies (SEA4KET);

[2] D. Lewke, et al.: Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices; Materials Science Forum 821-823, P. 528–532.


[3] Dohnke, Karl Otto; Kaspar, Korbinian; Lewke, Dirk: Comparison of Different Novel Chip Separation Methods for 4H-SiC. In: Materials Science Forum 821-823, S. 520–523.


[4] DISCO Technical Review Mar. 2016; Dicing technologies for SiC.

[5] Zühlke, Hans-Ulrich; Lewke, Dirk: High Yield Dicing of 100 mm and 150 mm SiC Wafer with High Throughput; SEMICON Europa 2016, Tech Lounge.