Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. Salemi et al., "Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes", Materials Science Forum, Vol. 924, pp. 568-572, 2018