Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Dominique Planson; Besar Asllani; Hassan Hamad; Marie Laure Locatelli; Roxana Arvinte; Christophe Raynaud; Pascal Bevilacqua; Luong Viet Phung

doi:10.4028/www.scientific.net/MSF.924.577

Paper Titles

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout
p.559

Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
p.563

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
p.568

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al⁺ and B⁺
p.573

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode
p.577

H³TRB Test on 650 V SiC JBS Diodes
p.581

4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness
p.585

Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers
p.589

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes
p.593

HomeMaterials Science ForumMaterials Science Forum Vol. 924Near Breakdown Voltage Optical Beam Induced...

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Abstract:

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P⁺ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.