Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode
This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
D. Planson et al., "Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode", Materials Science Forum, Vol. 924, pp. 577-580, 2018