H3TRB Test on 650 V SiC JBS Diodes

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Reliability characterization of SiC devices is an ongoing activity. For this work, 650 V SiC JBS diodes in TO247 housings were tested in H3TRB. After a test period of 4000 hours none of the devices had failed during the test and only two out of sixteen devices had failed during blocking curve measurements performed at intermediate time steps. This is significantly better performance than many silicon devices offer today. The failure spots of the failed devices were detected at the edge of the main junction appearing as semi-circular cavities in the aluminum metallization. All other devices did not even show deviations from their original blocking curves.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

581-584

Citation:

C. Zorn et al., "H3TRB Test on 650 V SiC JBS Diodes", Materials Science Forum, Vol. 924, pp. 581-584, 2018

Online since:

June 2018

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$38.00

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