Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications

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Abstract:

This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, fabricated on the same wafer. A benchmark against state of the art PiN diodes in Si technology is also provided.

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597-600

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June 2018

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.23919/ispsd.2017.7988891

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