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Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications
Abstract:
This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, fabricated on the same wafer. A benchmark against state of the art PiN diodes in Si technology is also provided.
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Pages:
597-600
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Online since:
June 2018
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© 2018 Trans Tech Publications Ltd. All Rights Reserved
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