Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications
This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, fabricated on the same wafer. A benchmark against state of the art PiN diodes in Si technology is also provided.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. Mihaila et al., "Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications", Materials Science Forum, Vol. 924, pp. 597-600, 2018