Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications

Abstract:

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This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, fabricated on the same wafer. A benchmark against state of the art PiN diodes in Si technology is also provided.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

597-600

Citation:

A. Mihaila et al., "Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications", Materials Science Forum, Vol. 924, pp. 597-600, 2018

Online since:

June 2018

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* - Corresponding Author

[1] www.wolfspeed.com.

[2] www.infineon.com.

[3] A. Mihaila, E. Bianda, L. Knoll, U. Vemulapati, L. Kranz, G. Alfieri, V. Soler, P. Godignon, C. Papadopoulos, M. Rahimo, Experimental investigation of SiC 6.5kV JBS diodes Safe Operating Area, Proceedings of ISPSD, Sapporo, Japan, 2017, pp.53-56.

DOI: https://doi.org/10.23919/ispsd.2017.7988891

[4] K. Kawahara, S. Hino, K. Sadamatsu, Y. Nakao, Y. Yamashiro, Y. Yamamoto, T. Iwamatsu, S. Nakata, S. Tomohisa, S. Yamakawa, 6.5 kV Schottky-Barrier-Diode-Embedded SiC-MOSFET for Compact Full-Unipolar Module, Proceedings of ISPSD, Sapporo, Japan, 2017, pp.53-56.

DOI: https://doi.org/10.23919/ispsd.2017.7988888

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