Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current

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Abstract:

The reverse-bias current-voltage characteristics of commercial 1200 V 4H-silicon-carbide junction barrier Schottky (SiC-JBS) rectifiers are studied both experimentally and through numerical simulation. The reverse leakage current measured from physical devices is observed to display both a strong temperature and field dependence. A model is presented to explain the observed behavior based on a combination of trap-assisted tunneling and a thermionic-emission mechanism through a potential barrier located at the metal-SiC interface. The study shows that a two-level trapping model can be necessary to properly explain the measured data. Excellent agreement between the models and the measurements is obtained over a wide range of bias and temperature.

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601-604

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June 2018

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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[1] R. Radharkrishnan et al., Proc. WIPDA 2014, 151 (2014).

Google Scholar

[2] J. Guem et al., IEEE T-ED, 37, (2016), 1045.

Google Scholar

[3] A. Latreche, International Journal of Physical Research, 2, (2014) 40.

Google Scholar

[4] M. Furno et al., Solid State Electronics, 51, (2007) 466.

Google Scholar

[5] L. Zhu and T. P. Chow, IEEE T-ED, 55, (2008) 1857.

Google Scholar

[6] K. Vassilevski et al., Mater. Sci. Forum, 527-529, (2006) 931.

Google Scholar

[7] A. Gehring, Simulation of Tunneling in Semiconductor Devices,, PhD. Dissertation, Technische Universität Wien, Vienna, Austria (2003).

Google Scholar