Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

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Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

605-608

Citation:

A. A. Lebedev et al., "Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes", Materials Science Forum, Vol. 924, pp. 605-608, 2018

Online since:

June 2018

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[1] H. Kaneko and T. Kimoto, Appl. Phys. Lett. 98 (2011) 262106.

[2] E. Omotoso, et al., Mat. Sci. Semicond. Processing 39 (2015) 112.

[3] A. Castaldini, A. Cavallini, L. Rigutti, and F. Nava, Appl. Phys. Lett. 85 (2004) 3780.

[4] K. Kawahara, et al., J. Appl. Phys. 115 (2014) 143705.

[5] V. V. Kozlovski, A. A. Lebedev, M. E. Levinshtein, S. L. Rumyantsev, and J. W. Palmour, Appl. Phys. Lett. 110 (2017) 083503.

[6] V. V. Kozlovski, A. A. Lebedev, M. E. Levinshtein, S. L. Rumyantsev, and J. W. Palmour, Appl. Phys. Lett. 110 (2017)133501.

[7] L. Calcagno, G. Izzo, G. Litrico et al., Journ. Appl. Phys. 102 (2007) 043523.

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