Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes
Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. A. Lebedev et al., "Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes", Materials Science Forum, Vol. 924, pp. 605-608, 2018