Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region

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This paper proposes a new N-type 4H-SiC extraction-enhanced vertical insulated-gate bipolar transistor (E2VIGBT), which uses a partial Schottky contact to the collector region bottom surface as a carrier extractor to enhance the carrier extraction, so that the switching performance will be improved. TCAD simulation shows that, at an operation frequency of 250 kHz, the E2VIGBT offers a turn-off loss decrease of 69.2% and a total energy loss in a single period reduction of 34.4% when compared with conventional field-stop 4H-SiC IGBTs. With further specific optimization, the proposed structure consumes less energy in a much wider frequency range. The simulation results indicate that this new type of IGBT performs better in high frequency applications.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

645-648

Citation:

G. N. Tang et al., "Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region", Materials Science Forum, Vol. 924, pp. 645-648, 2018

Online since:

June 2018

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$38.00

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