Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

Koutarou Kawahara; Shiro Hino; Koji Sadamatsu; Yukiyasu Nakao; Toshiaki Iwamatsu; Shuhei Nakata; Shingo Tomohisa; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.924.663

Paper Titles

Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region
p.645

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime
p.649

Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques
p.653

On the Optimum Determination and Use of SiC VJFET Threshold Voltage
p.657

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
p.663

Hole Trapping in the NBTI Characteristic of SiC MOSFETs
p.667

Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning
p.671

Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults
p.676

Vertical Tri-Gate Power MOSFETs in 4H-SiC
p.680

HomeMaterials Science ForumMaterials Science Forum Vol. 924Impact of Embedding Schottky Barrier Diodes into...

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

Abstract:

External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.