High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide

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Wide bandgap semiconductors, such as 4H SiC, are suitable for power regulating devices, due to compatibility with conventional process integration, high breakdown voltage and thermal conductivity [1]. For RF applications, in order to achieve better switching speed, high cut off frequency, and low series resistance (Rdson), it is essential to choose the right gate metals [2]. Engineering of the gate metals not only improves the critical device parameters by adjustment of the metal workfunction, but also affects how the high aspect ratio trenches are filled for a next generation SIT device configuration [3] - [5].

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

641-644

Citation:

J. Pan et al., "High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide", Materials Science Forum, Vol. 924, pp. 641-644, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

[1] T. Shi, IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium July (2008).

DOI: https://doi.org/10.1109/mwsym.2007.380164

[2] J. N. Pan, Mat. Res. Soc. Symp. Proc. Vol. 745 2003 Materials Research Society N3.2.

[3] S. Chen, IEEE J. of Emerging and Selected Topics in Power Electronics, Vol. 4, No. 3, SEP. (2016).

[4] J. Fuerherm, International Semiconductor Device Research Symposium, 2003 Pages: 134 - 135.

[5] A. Uhlemann, CIPS 2016; 9th International Conference on Integrated Power Electronics Systems Year: 2016 Pages: 1 - 6.

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