Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Mariana A. Fraga; Andre Contin; Graziela S. Savonov; Divani C. Barbosa; Rodrigo S. Pessoa; Vladimir J. Trava Airoldi

doi:10.4028/www.scientific.net/MSF.924.927

Paper Titles

Graphene/SiC Functionalization for Blood Type Sensing Applications
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3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
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Lateral GaN MISFETs Fabricated in Mg Ion Implanted Layer
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High Quality AlN Single Crystal Substrates for AlGaN-Based Devices
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Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates
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Electrical Properties of Schottky-Diodes Based on B Doped Diamond
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Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current
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Analysis of Zr_xSi_yO_z as High-k Dielectric for 4H-SiC MOSFETs
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Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Addressing the Properties of Ultranano- and...

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Abstract:

The growth of diamond films on different substrates has been studied extensively to support the emerging technologies ranging from mechanical to nano/microelectronics. It is known that the performance of these applications is affected by diamond film properties, such as structure and morphology. Using chemical vapor deposition (CVD) technique, we have deposited ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on 4H-SiC substrates and investigated their basic material properties. The understanding and exploitation of the material properties are fundamental to evaluate the potential of UNCD-on-SiC and MCD-on-SiC structures for fabrication of electronic devices and sensors.