Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

Khaled Driche; Hitoshi Umezawa; Shinya Ohmagari; Hajime Okumura; Yoshiaki Mokuno; Etienne Gheeraert

doi:10.4028/www.scientific.net/MSF.924.935

Paper Titles

Lateral GaN MISFETs Fabricated in Mg Ion Implanted Layer
p.919

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices
p.923

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates
p.927

Electrical Properties of Schottky-Diodes Based on B Doped Diamond
p.931

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current
p.935

Analysis of Zr_xSi_yO_z as High-k Dielectric for 4H-SiC MOSFETs
p.939

Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications
p.943

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
p.949

Design and Simulation of Bipolar 4H-SiC Memory Architecture for High Temperature Applications
p.953

HomeMaterials Science ForumMaterials Science Forum Vol. 924Electric Field Characterization of Diamond Metal...

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

Abstract:

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.