Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

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This report describes more than 5000 hours of successful 500 °C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 °C. After 100 hours of 500 °C burn-in, the circuits (except for 2 failures) exhibit less than 10% change in output characteristics for the remainder of 500 °C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460 °C in comparison to what is observed for Earth-atmosphere oven testing at 500 °C.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

949-952

Citation:

D. J. Spry et al., "Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits", Materials Science Forum, Vol. 924, pp. 949-952, 2018

Online since:

June 2018

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$38.00

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DOI: https://doi.org/10.1201/b13001-25

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