Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

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The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 °C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

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962-966

Citation:

P. G. Neudeck, "Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors", Materials Science Forum, Vol. 924, pp. 962-966, 2018

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June 2018

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