Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Philip G. Neudeck

doi:10.4028/www.scientific.net/MSF.924.962

Paper Titles

Electrochemical Formation of Porous Silicon Carbide for Micro-Device Applications
p.943

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
p.949

Design and Simulation of Bipolar 4H-SiC Memory Architecture for High Temperature Applications
p.953

Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology
p.958

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
p.962

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes
p.967

Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics
p.971

Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration
p.975

An Improved I-V Model of GaN HEMT for High Temperature Applications
p.980

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Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Abstract:

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 °C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

962-966

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.962

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Online since:

June 2018

Authors:

Philip G. Neudeck*

Keywords:

4H-SiC, Body Bias Effect, High Temperature, Integrated Circuit (IC), Resistor, SPICE

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References

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