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Solid State Phenomena
Vols. 1-2

HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2

Solid State Phenomena Vols. 1-2

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2

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Table of Contents

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Paper Title Page

Annealing of Implants Reduces Lattice Defects and 1/f Noise

Authors: L.K.J. Vandamme

153

Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application

Authors: I Wei Wu

159

Fabrication of Nanometer Doping Structures by Secondary Implantation

Authors: H. Jorke

169

The Use of Ion Implantation for Lifetime Control in Silicon Devices

Authors: A. Mogro-Campero

177

Silicon Surface and Interface Damage Studies Using Ion Implantation

Authors: S. Ashok

187

Recoil Implantation for Shallow Junction Formation in Silicon

Authors: Harry L. Kwok

195

Defects in SIMOX Structures

Authors: R.C. Barklie

203

A Review of Deep Levels in Donor-Ion Implanted GaAs

Authors: D.W.E. Allsopp

211

Ion Implantation in GaAs

Authors: Stephen J. Pearton

247

Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide

Authors: Sukhdev Singh Gill

281

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