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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Chemical Additive Formulations for Particle...

Chemical Additive Formulations for Particle Removal in SCCO₂-Based Cleaning

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

193-198

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.193

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Online since:

April 2005

Authors:

Michael B. Korzenski, D.D. Bernhard, T.H. Baum, Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori

Keywords:

Co-Solvent, Etch Rate, Particle Removal, Passivator, Supercritical CO₂, Surfactant

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Korzenski, C. Xu, T. Baum , K. Saga, H. Kuniyasu, and T. Hattori, in Cleaning Technology in Semiconductor Device Manufacturing VIII --J. Ruzyllo, T. Hattori, R. Novak, and R. Opila, PV 2003-26, p.222, The Electrochemical Society Proceedings Series, Pennington, NJ (2004).

[2] K. Christenson, in Particle Removal in Solutions of Dilute HF, Proceedings of the Semiconductor Pure Water and Chemicals Conference. Balazs Analytical Lab, Sunnyvale, Calif., pp.289-300, (1996).

[3] S. Angus, B. Armstrong, K.M. de Reuck, eds. International Thermodtnamic Tables of the Fluid State Carbon Dioxide. Oxford, England: Permagon Press, p.67, (1976).