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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Influences of Oxide Loss on Contamination Removal

Influences of Oxide Loss on Contamination Removal

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.177

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Online since:

April 2005

Authors:

Atsuro Eitoku, James Snow, Rita Vos, Karine Kenis, Paul W. Mertens

Keywords:

Contamination, Oxide Loss, Single Wafer Cleaning

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] W. Kern and D. Poutinen, RCA Rev.31, 187 (1970).

[2] International Technology Roadmap for Semiconductor, 2003, front end processes, 17-.

[3] A.Eitoku et.al, Proc. of the 5th Internat. Symp. on Ultra Clean Processing of Silicon Surfaces (2002), 157-160.

[4] G. Vereecke et.al, 8th Int. Symp. Cleaning Technol. in Semicond. Dev. Manufacturing, 204th Meeting of The Electrochemical Society, Orlando, FL, October 12-16, 2003 (Proc. 8th Intern. Symp. Cleaning Technol. in Semicond. Dev. Manufacturing, Eds. J. Ruzyllo, T. Hattori, R. Opila, and R.E. Novak, Electrochemical Society PV 2003-26, 2004, pp.145-152)

DOI: 10.1149/2.008033if