Simultaneous Analysis of Light and Heavy Organic Contamination on Silicon Wafer

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Solid State Phenomena (Volumes 103-104)

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209-212

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April 2005

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] Ishwari, S., Kato, H., and Habuka, H., J. Electrochem. Soc. 148 (2001) G644.

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[2] Pat. Appl. 20040042-FIN 0.00E+00 5.00E-11 1.00E-10 1.50E-10 2.00E-10 2.50E-10 3.00E-10 00:00 02:00 04:00 06:00 08:00 10:00 12:00 14:00 Time (mm:ss) Intensity 0 100 200 300 400 500 600Temperature (oC) m/z 73 (2-(2-aminoethoxy)ethanol (AEE)) temperature Figure 1. SIM ion chromatogram of 2-(2-amino-ethoxy)ethanol (AEE) measured during the heating of silicon wafer with stripping solvent. 0.00E+00 1.00E-08 2.00E-08 3.00E-08 4.00E-08 5.00E-08 6.00E-08 02:00 04:00 06:00 08:00 10:00 12:00 14:00 Time (mm:ss) Intensity 0 100 200 300 400 500 600Temperature (oC) m/z 99 (N-methyl-2-pyrrolidone (NMP)) temperature Figure 2. SIM ion chromatogram of N-methyl-2-pyrrolidone (NMP) measured during the heating of silicon wafer with stripping solvent. 0.00E+00 5.00E-12 1.00E-11 1.50E-11 2.00E-11 2.50E-11 3.00E-11 3.50E-11 00:00 02:00 04:00 06:00 08:00 10:00 12:00 14:00 16:00 18:00 20:00 22:00 Time (mm:ss) Intensity 0 100 200 300 400 500 600 700 800Temperature (oC) m/z 75 (Ethyl lactate) m/z 78 (Benzene) m/z 91 (Xylenes) m/z 108 (Methylphenols) m/z 116 (Unknown) m/z 122 (Dimethylphenols) m/z 44 (Carbon dioxide)/10 Temperature Figure 3. SIM ion chromatograms of the main components and pyrolytic products of photoresist desorbed and pyrolysed from a silicon wafer. Intensity of carbon dioxide is divided by 10. SPRT 515 /13.46 mg 0 20 40 60 80 100 0 100 200 300 400 500 600 Temperature (C) Mass % Figure 4. Thermogravimetric analysis of the photoresist used in pyrolysis experiments.

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