[1]
M. L. Polignano, E. Bellandi, D. Lodi, F. Pipia, A. Sabbadini, F. Zanderigo, G. Queirolo, F. Priolo, Mat. Sci. Eng. B55, (1998) 21.
DOI: 10.1016/s0921-5107(98)00192-5
Google Scholar
[2]
K. Graf, "Metal impurities in silicon device fabrication", Springer-Verlag, Berlin, (1995), pp.116-118.
Google Scholar
[3]
L. Jastrzebski, Mat. Sci. and Engineering, B4, 113 (1989).
Google Scholar
[4]
J. Lagowski, A. M. Kontkiewicz, L. Jastrzebski, and P. Edelman, Appl. Phys. Lett. 63 (1993) 2902.
Google Scholar
[5]
V. Lehmann and H. Föll, J. Electrochem. Soc. 135, 2831 (1988).
Google Scholar
[6]
E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter and T. B. Bright, Phys. Rev. Letters 57, 249 (1986).
Google Scholar
[7]
G. Ferenczi, J. Boda and T. Pavelka, Phys. Stat. Sol. (a) 94, K119 (1986).
DOI: 10.1002/pssa.2210940263
Google Scholar
[8]
N. E. Chabane-Sari, L. Thibaud, S. Kaddour, M. Berenguer and D. Barbier, J. Appl. Phys. 71, 3320 (1992).
Google Scholar
[9]
D.K. Schröder, "Semiconductor Material and Device Characterization", Wiley, New York, (1998), p.426.
Google Scholar