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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Direct Mixing Cleaning Method of Aqua Regia on...

Direct Mixing Cleaning Method of Aqua Regia on Wafer

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

245-248

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.245

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Online since:

April 2005

Authors:

Hajime Ugajin, Hayato Iwamoto, Kei Kinoshita

Keywords:

Aqua Regia, Platinum, Wet Etching

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[7] P.S. Lysaght, I. Ybarra, T. Doros, J.V. Beach, H. Sax, J.L. Mello, M.G. West, and G. Gupta: ECS October, 1999 Fig.1 Life time of Aqua Regia Fig.2 The procedure of the single Aqua regia process. Fig.3 Etching rate dependence of chemical dispense order. Fig. 4 The effect of decontamination of Pt on the wafer backside. Picture 1. The undercut area on the edge of the wafer. Fig.5 Etching rate of Aqua Regia by conventional wet bench. Fig.6 Etching rate of Aqua Regia by direct mixing method. Recirculation Chemical Tank 1 Chemical Tank 2 a. Supply chemical 1 Drain b. Supply chemical 2 and reaction of Aqua Regia Chemical Tank 1 Chemical Tank 2 Drain DIW c. Rinse and dry 0 2 4 6 8 10 0 10 20 30 40 Elapsed Time[min] Etch rate of Pt [nm/min] HNO3:HCl = 1: 3 (Vol), 60ºC 0.0 0.5 1.0 1.5 2.0 HNO3 -> HCL Etch rate[A.U.] HCL -> HNO3 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 Pre Post Pre Post Pre 10sec 20sec 30sec HCl-> HNO HCl-> HNO/HF FPM (1:1:10) Post Pt Contamination [atoms/cm2] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 40ºC 60ºC 40ºC 60ºC HNO3:HCl:H2O = 1:3:4 HNO3:HCl:H2O = 1:3:6 Etch rate[nm/min] Pt Poly Si SiN SiO2 Concentration