Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide

Lucile Broussous; Pascal Besson; M.M. Frank; D. Bourgeat

doi:10.4028/www.scientific.net/SSP.103-104.249

Paper Titles

Further Reduction of Trace Level Ion from Ultra Pure Water and Its Effect on Electrical Property of Device
p.233

Prevention of Copper Cross-Contamination on Cu Process and Non-Cu Process Mixed Fabrication
p.237

Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing
p.241

Direct Mixing Cleaning Method of Aqua Regia on Wafer
p.245

Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide
p.249

The Degradation Prevention of Resin Materials for Semiconductor Manufacturing Equipment by Applying the Ultra-High Purity Gas Supply Technology
p.255

Measurement and Control of Airborne Molecular Contamination during Wafer Storage and Transport
p.259

Purification of Trace Amount of Metal Impurity from Ultra Pure Water Using Membrane Purifier/Filter
p.265

Metal Contamination on Silicon Surfaces from Solvents
p.269

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Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide

Abstract:

In this study, we used an SEZ single-wafer spin-processor to develop a single backside cleaning solution able to remove any metallic or exotic contaminants by etching a few angstroms of the wafer backside, whatever its coating (no coating, Si3N4 or SiO2). An H2O:H2O2:H2SO4:HF mixture was selected because it allowed independent control of the etch rate on the 3 materials of interest, without roughening to much the silicon surface. Chemistry efficiency was then checked on wafers intentionally contaminated with various metals, and on “production wafers” contaminated during exotic materials deposition or classical copper processes.

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

249-254

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.249

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Online since:

April 2005

Authors:

Lucile Broussous, Pascal Besson, M.M. Frank, D. Bourgeat

Keywords:

Backside Cleaning, Metallic Contamination, Single Wafer Tool

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References

[1] T.Gravier, F.Braud, J.Torres, et al.: Microelectronic Engineering 33 (1997), pp.211-216.

Google Scholar

[2] J.P. Joly: Microelectronic Engineering 40 (1998), pp.285-294.

Google Scholar

[3] International Technology Roadmap for Semiconductors (ITRS), 2003 edition. [4].A.A Isrtatov, E.R. Weber: Journal of the Electrochemical Society 149 (2002), p.G21.

Google Scholar

[5] K.V. Ravi: Future Fab International 7 (2001) pp.107-110.

Google Scholar

[6] C.Saravanan, Z.Liu, W.Yang, et al.: MICRO magazine, April 2004.

Google Scholar

[7] K.Lederer, M.Scholtze, A.Wocko, et al.: Yield Management Solutions 6 (2004) pp.6-10.

Google Scholar

[8] G.Choi, T.Ohmi: Journal of the Electrochemical Society 148 (2001), p.G241- G248.

Google Scholar

[9] C.Richard, F.Guyader, K.Barla: Solid State Phenomena, Vol. 92 (2003), pp.121-124.

Google Scholar

[10] P.Boelen, S.Verhaverbeke: Solid State Phenomena, Vol. 92 (2003), pp.49-52.

Google Scholar