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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Further Reduction of Trace Level Ion from Ultra...

Further Reduction of Trace Level Ion from Ultra Pure Water and Its Effect on Electrical Property of Device

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Abstract:

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.233

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Online since:

April 2005

Authors:

Toru Umeda, Shuichi Tsuzuki, Ryouji Kokuun, Kazuko Yoneda

Keywords:

Amine, Filter, Ion-Exchange, Metallic Ion, Qbd, Time-Dependent Dielectric Breakdown, Ultra Pure Water

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] Yasuhiko Kimura et al.: Influence of Very-small-quantity Metal Contamination(Ca,Mg,Zn) on Device Yield ISSM 2002 proceedings p.57

[2] Masahiko Kogure: Doctor dissertation, Studies in technologies in ultra pure water to have higher performance used in semiconductor wet process,Tohoku Univ., Japan

[3] Mitsutake Aoyagi et al.: Ultra pure water and high purity agent supply system, p.121 (Realize Corporation, 1986 )

[4] Service manual for utilizing ion exchange resin, Mitsubishi Chemical technical service series Diaion Ion-exchange resin and synthetic adsorption material manual I basic volume p.72(Mitsubishi chemical corporation, (1995)