Paper Titles
VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers
p.213
Cu Spin Cleaning Evaluation by SOR X-Ray Fluorescence Analysis
p.217
Application of HPLC for the Analysis of Organic Additives in Cleaning Chemicals and Cleaning Mixtures
p.221
Chromium Contamination in Silicon: Detection and Impact on Oxide Performances
p.227
Further Reduction of Trace Level Ion from Ultra Pure Water and Its Effect on Electrical Property of Device
p.233
Prevention of Copper Cross-Contamination on Cu Process and Non-Cu Process Mixed Fabrication
p.237
Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing
p.241
Direct Mixing Cleaning Method of Aqua Regia on Wafer
p.245
Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide
p.249

Further Reduction of Trace Level Ion from Ultra Pure Water and Its Effect on Electrical Property of Device

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.233

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Online since:

April 2005

Authors:

Toru Umeda, Shuichi Tsuzuki, Ryouji Kokuun, Kazuko Yoneda

Keywords:

Amine, Filter, Ion-Exchange, Metallic Ion, QbD, Time-Dependent Dielectric Breakdown, Ultra Pure Water

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Yasuhiko Kimura et al.: Influence of Very-small-quantity Metal Contamination(Ca,Mg,Zn) on Device Yield ISSM 2002 proceedings p.57

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[2] Masahiko Kogure: Doctor dissertation, Studies in technologies in ultra pure water to have higher performance used in semiconductor wet process,Tohoku Univ., Japan

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[3] Mitsutake Aoyagi et al.: Ultra pure water and high purity agent supply system, p.121 (Realize Corporation, 1986 )

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[4] Service manual for utilizing ion exchange resin, Mitsubishi Chemical technical service series Diaion Ion-exchange resin and synthetic adsorption material manual I basic volume p.72(Mitsubishi chemical corporation, (1995)

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