Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing

Abstract:

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In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2.

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

241-244

DOI:

10.4028/www.scientific.net/SSP.103-104.241

Citation:

R. Vos et al., "Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing", Solid State Phenomena, Vols. 103-104, pp. 241-244, 2005

Online since:

April 2005

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Price:

$35.00

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