Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing

Rita Vos; Els Kesters; Sylvain Garaud; R. De Waele; Karine Kenis; Marcel Lux; H. Kraus; James Snow; Denis Shamiryan; Gabriela Catana; W. Deweerd; T. Schram; S. DeGendt; Paul W. Mertens

doi:10.4028/www.scientific.net/SSP.103-104.241

Paper Titles

Application of HPLC for the Analysis of Organic Additives in Cleaning Chemicals and Cleaning Mixtures
p.221

Chromium Contamination in Silicon: Detection and Impact on Oxide Performances
p.227

Further Reduction of Trace Level Ion from Ultra Pure Water and Its Effect on Electrical Property of Device
p.233

Prevention of Copper Cross-Contamination on Cu Process and Non-Cu Process Mixed Fabrication
p.237

Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing
p.241

Direct Mixing Cleaning Method of Aqua Regia on Wafer
p.245

Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide
p.249

The Degradation Prevention of Resin Materials for Semiconductor Manufacturing Equipment by Applying the Ultra-High Purity Gas Supply Technology
p.255

Measurement and Control of Airborne Molecular Contamination during Wafer Storage and Transport
p.259

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Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing

Abstract:

In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2.

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.241

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Online since:

April 2005

Authors:

Rita Vos, Els Kesters, Sylvain Garaud, R. De Waele, Karine Kenis, Marcel Lux, H. Kraus, James Snow, Denis Shamiryan, Gabriela Catana, W. Deweerd, T. Schram, S. DeGendt, Paul W. Mertens

Keywords:

Backside Cleaning, High-k, Metal Gate, Single Wafer Cleaning

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References

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