Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing
In this work the removal of different metallic and particulate contaminants relevant for high-k/metal gate processing is studied. Best cleaning efficiency of both silicon and nitride substrates is achieved using a HF/HNO3-based cleaning resulting in a particle removal efficiency higher than 90% and metal removal down to 1010 at/cm2.
Paul Mertens, Marc Meuris and Marc Heyns
R. Vos et al., "Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing", Solid State Phenomena, Vols. 103-104, pp. 241-244, 2005