Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing Flow

Abstract:

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As 65nm technology in mass production and 45nm technology under development, post etch ash and cleaning faces new challenges with far more stringent requirements on surface cleanliness and materials loss. The introduction and integration of new materials, such as metal hard mask, creates additional requirements for wafer cleaning due to the occurrence of new defect modes related to metal hard mask. We have optimized a post etch ash process and developed a novel aqueous solution (AQ) based single wafer cleaning process to address these new defect modes. Physical characterization results and process integration electrical data are presented in this paper.

Info:

Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

359-362

DOI:

10.4028/www.scientific.net/SSP.134.359

Citation:

M. C. Lin et al., "Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing Flow", Solid State Phenomena, Vol. 134, pp. 359-362, 2008

Online since:

November 2007

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Price:

$35.00

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