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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Influence of the Process Conditions of a Polishing...

Influence of the Process Conditions of a Polishing Rinse after CuCMP

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Ultra Clean Processing of Semiconductor Surfaces VIII

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

375-378

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.375

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Online since:

November 2007

Authors:

Andrea Filippini, Sébastien Petitdidier, Chantal Trouiller, Alexandre Couvrat, Marie Christine Luche, Eric Sabouret

Keywords:

Cu CMP, Defectivity, Material Consumption, Polishing Rinse

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1149/1.1393335

[2] - Y. Zhuang; Z. Li; Y. Shimazu, Y.; N. Uotani,; L. Borucki, A. Philipossian : Jpn. J. Appl. Phys. 44 (1A) (2005), p.82.