Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

Claire Therese Richard; D. Benoit; S. Cremer; L. Dubost; B. Iteprat; M. Vincent; E. De Bock; C. Perrot; C. Rossato; M. Proust; S. Guillaumet

doi:10.4028/www.scientific.net/SSP.134.379

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Optimization of a SC CO₂ Post-Etch Cleaning for Copper Interconnections
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Study of Resist Strip Chemistries for Ultra Low-k/Cu Interconnect
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Effect of Wafer Rotation on Photoresist Stripping in Supercritical CO₂
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Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing Flow
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Mechanism and Principles of Post Etch Al Cleaning with Inorganic Acids
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AlCu Metal Line Corrosion: A Case Study
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Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
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Influence of the Process Conditions of a Polishing Rinse after CuCMP
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Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors
p.379

HomeSolid State PhenomenaSolid State Phenomena Vol. 134Wet Process Developments for Electrical Properties...

Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

Abstract:

3D architecture is an alternative way to high-k dielectric to increase the capacitance of MIM structure. However, the top of this kind of structure is very sensitive to defectivity and then requires a special wet treatment. In this paper, we present the process flow for a 3D MIM integration in a CMOS copper back-end and a two steps wet process which provides very good electrical performances, i.e. leakage current lower than 10-9A.cm-2 at 5V / 125°C and breakdown voltage higher than 20V. At first, a SC1 step is done for electrode isolation improvement by material etching with good selectivity towards dielectric: that’s the electrode recess. In the second time, a HF step is done for copper oxide dilution and residues removal from the top of the 3D structure.

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

379-382

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.379

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Online since:

November 2007

Authors:

Claire Therese Richard, D. Benoit, S. Cremer, L. Dubost, B. Iteprat, M. Vincent, E. De Bock, C. Perrot, C. Rossato, M. Proust, S. Guillaumet

Keywords:

3D MIM, Electrode Recess, Wet Etch

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References

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