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Paper Titles
Preface
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
p.1
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
p.7
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
p.13
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
p.21
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
p.27
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
p.33
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
p.39
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
p.47

Preface

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Periodical:

Solid State Phenomena (Volume 361)

Online since:

August 2024

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