Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes

Davood Momeni; Massimo Mazzillo; Sibasish Laha; M. Sazrin B. Abd. Sani; Jesus Urresti; Tian Xiang Dai; Christian Liguda; Soenke Habenicht

doi:10.4028/p-S31g4f

Paper Titles

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
p.7

Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
p.13

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
p.21

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
p.27

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
p.33

A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
p.39

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
p.47

Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
p.53

Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
p.59

HomeSolid State PhenomenaSolid State Phenomena Vol. 361Early-Stage Reliability Evaluation of Passivation...

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes

Abstract:

We present an early-stage reliability evaluation approach to assess the impact of surface charges in the passivation overcoat (PO) film layers. This is obtained by applying a so-called accelerated wafer-level reverse breakdown voltage stability test in combination with wafer-level static and Van der Pauw measurements. Here, we applied this approach on 4H-SiC merged PiN Schottky diodes with a single-zone junction termination extension fabricated by using different border doses and PO stacks. Accordingly, the correlation between design parameters and the influence of surface charges can be quickly identified, leading to reduced cycle time and enhanced product reliability by optimizing the design of the JTE parameters already in the development phase. This study supports diodes and MOSFETs product manufacturing with an efficient optimization approach to address design and process impacts toward acquiring long-term lifetime demanded in automotive and industrial applications.

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Periodical:

Solid State Phenomena (Volume 361)

Pages:

33-38

DOI:

https://doi.org/10.4028/p-S31g4f

Citation:

Cite this paper

Online since:

August 2024

Authors:

Davood Momeni*, Massimo Mazzillo, Sibasish Laha, M. Sazrin B. Abd. Sani, Jesus Urresti, Tian Xiang Dai, Christian Liguda, Soenke Habenicht

Keywords:

Accelerated Wafer-Level BVR Reliability Test, Ionic-Mobile Charges, Protection Overcoat Design, Silicon Carbide MPS Diode, Single-Zone Junction Termination Extension

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* - Corresponding Author

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