Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses

Christian Schwabe; Niklas Seltner; Thomas Basler

doi:10.4028/p-tR8KUM

Paper Titles

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
p.1

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
p.7

Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
p.13

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
p.21

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
p.27

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
p.33

A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
p.39

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
p.47

HomeSolid State PhenomenaSolid State Phenomena Vol. 361Reliability of SiC MOSFETs in the High Cycle...

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses

Abstract:

Device reliability is an important factor in application, especially in the field of electric mobility. In this paper high cycle fatigue power cycling results of SiC devices in baseplate free modules are presented. To minimize testing time, the devices were stressed with load pulses corresponding to a 50 Hz load. The reliability results are the first fatigue results for temperature swings below 30 K for SiC devices. The lifetime in the high cycle fatigue area is limited by solder fatigue for high virtual junction temperatures of 150 °C. In theory, the reliability should increase exponential since the elastic-plastic transition area is reached. The experiment revealed that the lifetime can still be described by the Coffin-Manson approach also in the high cycle fatigue area. It can be observed that the high junction temperatures weaken the stability of the solder layer, so no major lifetime increase can develop. The measured temperature data are additionally corrected by a three-dimensional (3D) simulation to ensure a validity of the results.

By email View Pdf

You might also be interested in these eBooks

20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

View Preview

Solid-State Power Devices: Operational Reliability and Parameters' Stability

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 361)

Pages:

7-12

DOI:

https://doi.org/10.4028/p-tR8KUM

Citation:

Cite this paper

Online since:

August 2024

Authors:

Christian Schwabe*, Niklas Seltner, Thomas Basler

Keywords:

3D Simulation, High Cycle Fatigue, Power Cycling, Reliability, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] Infineon, "How Infineon controls and assures the reliability of SiC based power semiconductors," in Whitepaper, Neubiberg, 2020.

Google Scholar

[2] B. Hu and et al. , "Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device," in IEEE Transactions on Device and Materials Reliability, DOI:10.1109/TDMR.2017.2766692, 2017.

DOI: 10.1109/tdmr.2017.2766692

Google Scholar

[3] C. Herold, M. Schäfer, F. Sauerland, T. Poller, J. Lutz and O. Schilling, "Power cycling capability of Modules with SiC-Diodes," in Proc. of PCIM , Nuremberg, 2014.

Google Scholar

[4] J. Lutz, C. Schwabe, G. Zeng and L. Hein, "Validity of power cycling lifetime models for modules and extension to low temperature swings," in 21st EPE Europe, Lyon, 2020.

DOI: 10.23919/epe20ecceeurope43536.2020.9215609

Google Scholar

[5] C. Schwabe, N. Thönelt, P. Seidel, J. Lutz and T. Basler, "Power cycling lifetime investigation under low temperature swings and 50 Hz load with experiment and simulation," in Proc. of PCIM, Nuremberg, 2021.

Google Scholar

[6] F. Hoffmann, S. Schmitt and N. Kaminski, "Lifetime Modeling of SiC MOSFET Power Modules During Power Cycling Tests at Low Temperature Swings," in 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hongkong, 2023.

DOI: 10.1109/ispsd57135.2023.10147533

Google Scholar

[7] IEC 60749-34, Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling, Geneva: Norm, 2010.

Google Scholar

[8] A. Gaonkar and et al., "An Assessment of Validity of the Bathtub Model Hazard Rate Trends in Electronics," in IEEE Access, DOI: 10.1109/ACCESS.2021.3050474, 2021.

DOI: 10.1109/access.2021.3050474

Google Scholar

[9] P. Seidel, C. Herold, J. Lutz, C. Schwabe and R. Warsitz, "Power cycling test with power generated by an adjustable part of switching losses," in 19th EPE Europe, Warsaw, 2017.

DOI: 10.23919/epe17ecceeurope.2017.8099393

Google Scholar

[10] C. Schwabe, N. Thönelt and T. Basler, "Reliability investigation of SiC MOSFETs under switching operation in various packages," in Proc. of CIPS, Berlin, 2022.

Google Scholar

[11] R. Bayerer, T. Licht, T. Herrmann, J. Lutz and M. Feller, "Model for Power Cycling lifetime of IGBT Modules – various factors influencing lifetime," in Proceedings of CIPS, Nuremberg, 2008.

Google Scholar

[12] C. Schwabe, N. Thönelt, J. Lutz and T. Basler, "High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions," in IEEE Transactions on Power Electronics, DOI: 10.1109/TPEL.2023.3296269, 2023.

DOI: 10.1109/tpel.2023.3296269

Google Scholar

[13] C. Herold, J. Franke, R. Bhojani, A. Schleicher and J. Lutz, "Requirements in power cycling for precise lifetime estimation," in Microelectronics reliability, Elsevier, 2015.

DOI: 10.1016/j.microrel.2015.12.035

Google Scholar

[14] D. Blackburn, "An electrical technique for the measurement of the peak junction temperature of power transistors," in 13th Int. Reliability Physics Symposium, Las Vegas, 1975.

DOI: 10.1109/irps.1975.362688

Google Scholar