Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Jae Hwa Seo; Young Jun Yoon; Young Jo Kim; Hyoung Woo Kim

doi:10.4028/p-RxFX7F

Paper Titles

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
p.1

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
p.7

Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
p.13

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
p.21

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
p.27

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
p.33

A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
p.39

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
p.47

HomeSolid State PhenomenaSolid State Phenomena Vol. 361Total Ionizing Dose (TID) Effects on the 1.2 kV...

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Abstract:

In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (V_th) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in V_th and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.

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Periodical:

Solid State Phenomena (Volume 361)

Pages:

1-5

DOI:

https://doi.org/10.4028/p-RxFX7F

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Online since:

August 2024

Authors:

Jae Hwa Seo*, Young Jun Yoon, Young Jo Kim, Hyoung Woo Kim

Keywords:

1.2kV-Class, MOSFET, Proton Irradiation, Silicon Carbide (SiC), Total Ionizing Dose (TID)

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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