Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Alexander A. Lebedev; Vitalii V. Kozlovski; Mikhail E. Levinshtein; Klavdia S. Davydovskaya; Roman A. Kuzmin

doi:10.4028/p-Ca8zY5

Paper Titles

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
p.1

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
p.7

Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
p.13

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
p.21

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
p.27

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
p.33

A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
p.39

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
p.47

HomeSolid State PhenomenaSolid State Phenomena Vol. 361Dependence of the Silicon Carbide Radiation...

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Abstract:

The effect of high-temperature electron and proton irradiation on SiC-based device characteristics is being investigated. Industrial integrated 4H-SiC Schottky diodes, each with an n-type base and a blocking voltage of either 600 V, 1200 V, or 1700 V, manufactured by Wolfspeed, are being studied. 0.9 MeV electron and 15 MeV proton irradiation were applied. It has been found that the irradiation resistance of silicon carbide Schottky diodes at high temperatures significantly exceeds their resistance at room temperature. This effect is attributed to the annealing of compensating defects induced by high-temperature irradiation. The parameters of radiation-induced defects are determined using the method of deep level transient spectroscopy (DLTS). Under high-temperature ("hot") irradiation, the spectrum of radiation-induced defects introduced into SiC appears to differ significantly from the spectrum of defects introduced at room temperature. It is suggested that approximately half of the compensation is due to radiation-induced defects formed in the bottom part of the bandgap.

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Periodical:

Solid State Phenomena (Volume 361)

Pages:

21-25

DOI:

https://doi.org/10.4028/p-Ca8zY5

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Online since:

August 2024

Authors:

Alexander A. Lebedev*, Vitalii V. Kozlovski, Mikhail E. Levinshtein, Klavdia S. Davydovskaya, Roman A. Kuzmin

Keywords:

Annealing, Capacitance-Voltage Characteristics, Compensating Defects, Current-Voltage Characteristics, DLTS (Deep-Level Transient Spectroscopy), Electron Irradiation, Proton Irradiation, Radiation-Induced Defects, Schottky Diodes, Silicon Carbide (SiC)

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* - Corresponding Author

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